Pablo O. Vaccaro

Institut de Ciència de Materials de Barcelona

Engineering Sciences

Pablo Vaccaro earned his Licenciatura in Physics working on LPE of IV-VI compound semiconductors, in 1986, and his Doctor in Physics degree working on CdS/CdTe solar cells, in 1991, at Balseiro Institute, Bariloche, Argentina. He joined Prof. Hiroyuki Matsunami's laboratory at the Dept. of Electrical Engineering, Kyoto University, Japan, where he conducted post-doctoral research on chemical beam epitaxy (CBE) of III-V compound semiconductors until 1993. He then moved to Advanced Telecom. Research Institute, in Kyoto, Japan, where he conducted research on MBE of III-V compound semiconductors and optoelectronic devices fabrication, reaching the position of Senior Researcher. In 2006 he was hired by Sharp Corporation at the Advanced Technology Research Labs., in Nara, Japan, where he worked on MOCVD of III-N compound semiconductors and fabrication process of blue laser diodes and LEDs. He became ICREA Research Professor at the Institute of Materials Science of Barcelona in 2010.

Research interests

SiGe thermoelectric far-infrared sensors integrated on silicon substrates. Tensile strained germanium on silicon substrates for monolithically integrated optoelectronics. SiGe nanowires for thermoelectric applications. Piezoresistivity in Si/Ge nanostructures and III-V heterostructures. Surface plasmons in ferroelectric materials Soft X-ray lithography.