Jose A. Garrido

Institut Català de Nanociència i Nanotecnologia (ICN2)

Engineering Sciences

Jose A. Garrido is an ICREA Research Professor at the Catalan Institute of Nanosciences and Nanotechnology-ICN2 in Barcelona, and head of the Advanced Electronic Materials and Devices group. He received a Master and PhD degree in Telecommunication Engineering from the Technical University of Madrid, in 1996 and 2000, respectively. From 2001 to 2004, he worked as a postdoc at the Walter Schottky Institute, Technische Universität München, where he obtained his habilitation in experimental physics in 2010. From 2011 to 2015, Jose A. Garrido held a lecturer (privatdozent) position at the department of physics of the Technische Universität München. In September 2015, Jose A. Garrido joined ICN2 as ICREA Professor.

Research interests

At ICN2 -Catalan Institute of Nanosciences and Nanotechnology, Jose A. Garrido leads the Advanced Electronic Materials and Devices group. The activities of the team focus on technology and material science of novel electronic materials, with a strong emphasis on graphene and other 2D materials. In addition, the team works towards the development of technological applications of these materials in electronics, bioelectronics, and biosensing. The activities cut across different scientific aspects, from fundamentals (physics of devices and semiconductors) to materials (growth of graphene and 2D materials, surface functionalization, advanced characterization), through devices (fabrication technology, nanofabrication), and to applications (biosensors, neural implants and biomedical technologoes, energy storage and conversion).

Selected publications

– Schamoni H, Noever S, Nickel B, Stutzmann M & Garrido JA 2016, ‘Alpha,omega-dihexyl-sexithiophene thin films for solution-gated organic field-effect transistors’, Applied Physics Letters, 108, 7, 073301.

– Sachsenhauser M, Walczak K, Hampel PA, Stutzmann M, Sharp ID & Garrido JA 2016, ‘Suppression of Photoanodic Surface Oxidation of n-Type 6H-SiC Electrodes in Aqueous Electrolytes’, Langmuir, 32, 6, 1637 – 1644.

– Sachsenhauser M, Sharp ID, Stutzmann M & Garrido JA 2016, ‘Surface State Mediated Electron Transfer Across the N-Type SiC/Electrolyte Interface’, Journal Of Physical Chemistry C, 120, 12, 6524 – 6533.

– Blaschke BM, Lottner M, Drieschner S, Calia AB; Stoiber K, Rousseau L, Lissourges G & Garrido JA 2016, ‘Flexible graphene transistors for recording cell action potentials’, 2d Materials, 3, 2, 025007.

– Drieschner S, Weber M, Wohlketzetter J, Vieten J, Makrygiannis E, Blaschke B, Morandi V, Colombo L, Bonaccorso F & Garrido JA 2016, ‘High surface area graphene foams by chemical vapor deposition’, 2d Materials, 3, 4, 045013.

– Drieschner S, Weber M, Wohlketzetter J, Vieten J, Makrygiannis E, Blaschke BM, Morandi V, Colombo L, Bonaccorso F & Garrido JA 2016, ‘High surface area graphene foams by chemical vapor deposition’, 2D Mater. 3, pp 045013.

Selected research activities

· Coordinator of the EU FET Proactive project BRAINCOM (2016-2021).

· Deputy of the Biomedical Technologies WP of the EU raphene Flagship Initiative.